N TYPE GE NO FURTHER A MYSTERY

≤ 0.fifteen) is epitaxially grown on a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and afterwards the composition is cycled as a result of oxidizing and annealing phases. Due to the preferential oxidation of Si over Ge [sixty eight], the initial Si1–has motivated quite a few experiments to seek out alternate passivation pr